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當(dāng)前位置 首頁 人才隊伍
  • 姓名： 王磊
  • 性別： 男
  • 職稱： 副研究員
  • 職務(wù)： 
  • 學(xué)歷： 博士
  • 電話： 010-82995750
  • 傳真： 010-82995836
  • 電子郵件： wangle@ime.ac.cn
  • 所屬部門： 硅器件中心
  • 通訊地址： 北京市朝陽區(qū)北土城西路3號

    簡　　歷：

  • 教育背景

    2007年9月-2012年7月，北京大學(xué)，凝聚態(tài)物理，博士?

    2010年1月-2010年7月，英國Strathclyde大學(xué)，光電子物理與器件，聯(lián)合培養(yǎng)博士?

    2003年7月-2007年9月，南開大學(xué)，材料物理，學(xué)士?

    工作簡歷?

    2020年7月-今，?????? 中國科學(xué)院微電子研究所，副研究員?

    2017年3月-2020年7月，中國科學(xué)院微電子研究所，助理研究員?

    2013年7月-2017年3月，北京新立基真空玻璃技術(shù)有限公司，技術(shù)副總監(jiān)?

    2012年7月-2013年7月，京東方科技集團(tuán)股份有限公司，高級研究員

    社會任職：

  • 1. 中國核學(xué)會輻射物理分會，會員

    2. 國際知名期刊雜志Applied Physics Letters，Journal of Applied Physics，Optics Express，Optics Letters，Solar Energy，Applied Surface Science審稿人

    研究方向：

  • 半導(dǎo)體材料與器件可靠性研究

    承擔(dān)科研項目情況：

  • 1.?中國科學(xué)院基礎(chǔ)前沿科學(xué)研究計劃從0到1原始創(chuàng)新項目，ZDBS-LY-JSC015，“晶圓級單晶二維層狀半導(dǎo)體材料制備及相關(guān)高性能異質(zhì)結(jié)構(gòu)器件集成”，2019-2024年，300萬元，在研，主持?

    2. 中國科學(xué)院近代物理研究所HIRFL用戶培育項目，HIR19PY015，“高速數(shù)據(jù)傳輸光通信模塊輻射效應(yīng)研究”，2020-2021年，10萬元，在研，主持?

    3. 中國原子能研究院抗輻照應(yīng)用技術(shù)創(chuàng)新中心創(chuàng)新基金項目，KFZC2018040203，“重離子輻照改性制備量子通訊技術(shù)用BN單光子光源方法研究”，2018-2020年，15萬元，在研，主持?

    4. 國家自然科學(xué)基金委員會與俄羅斯基礎(chǔ)研究基金會合作交流項目，62011530040，納米級半導(dǎo)體器件的綜合輻射效應(yīng)研究，2020-01至2021-12，14.46萬元，在研，參與?

    5.? 國家自然科學(xué)基金面上項目，61076013，“InGaN調(diào)制量子阱結(jié)構(gòu)和性質(zhì)”，2011-2013年，已結(jié)題，參與?

    6.? 國家自然基金青年基金項目，51102003，“GaN基異質(zhì)結(jié)構(gòu)半導(dǎo)體光催化和微生物催化協(xié)同降解有機廢水的研究”，2012-2014年，已結(jié)題，參與

    代表論著：

  • 期刊論文：?

    1. Lei Wang, Ningyang Liu, Ligang Song, Bo Li, et al, Multi-Angle Analysis of 30 MeV Silicon Ion Beam Irradiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes, IEEE Transactions on Nuclear Science, 65, 2784, 2018.?

    2. Lei Wang, Zhangxu Pan, Bo Li, Junjun Wang, et al, Mechanism Analysis of Proton Irradiation Induced Increase of 3dB Bandwidth of GaN-based Micro Light Emitting Diodes for Space Light Communication, IEEE Transactions on Nuclear Science, 67, 7, 1360, 2020.?

    3. Lei Wang, Ningyang Liu, Bo Li, Huiping Zhu, et al, Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light Emitting Diodes, IEEE Transactions on Nuclear Science, 67, 7, 1345, 2020.?

    4. 王磊，李博，張學(xué)文，李彬鴻等，X射線和重離子輻射對GaN基發(fā)光二極管光學(xué)特性的影響，微處理機，第6期，第40卷，2019年。?

    5. Lei Wang, Cimang Lu, Jianing Lu, Lei Liu, et al, Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes, Optics Express, 19, 14182, 2011.?

    6. Lei Wang, Rui Li, Ding Li, Ningyang Liu, et al, Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer, Applied Physics Letters, 96, 061110, 2010.?

    7. Lei Wang, Rui Li, Ziwen Yang, Ding Li, et al, High spontaneous emission rate asymmetrically graded 480nm InGaN/GaN quantum well light-emitting diodes, Applied Physics Letters, 95, 211104, 2009.?

    8. Qingxuan Li, Bo Li, Lei Wang*, Baoping Zhang, et al, Comparison of 10 MeV electron beam radiation effect on InGaN/GaN and GaN/AlGaN multiple quantum wells, Journal of Luminescence, 210, 169, 2019.?

    9. Ningyang Liu, Qiao Wang, Bo Li, Lei Wang*, Point Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD, Journal of Physical Chemistry: C, 123, 8865, 2019.?

    10. Lei Liu, Lei Wang, Ding Li, Ningyang Liu, et al, Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures, Journal of Applied Physics, 109, 073106, 2011. ?

    11. Lei Liu, Lei Wang, Ningyang Liu, Ding Li, et al, Investigation of the light emission properties and carrier dynamics in dual-wavelength InGaN/GaN multiple-quantum well light emitting diodes, Journal of Applied Physics, 101, 083101, 2012. ?

    12. Cimang Lu, Lei Wang, Jianing Lu, Rui Li, et al, Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum wells light-emitting diodes under direct and pulse currents, Journal of Applied Physics, 113, 013102, 2013.?

    13. Lei Liu, Lei Wang, Cimang Lu, Ding Li, et al, Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer, Applied Physics A-Materials Science&Processing, 108, 771, 2012. ?

    14. Lei Li, Lei Liu, Lei Wang, Ding Li, et al, The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates, Applied Physics A-Materials Science&Processing, 108, 857, 2012.?

    15. J. Zhang, X. Chen, L. Wang, Z. S. Zheng, et al, Studies of radiation effects in Al2O3-based metal-oxide-semiconductor structures induced by Si heavy ions, Journal of Applied Physics, 125, 115701, 2019.?

    16. Yan Cui, Huiping Zhu, Lei Wang, Bo Li, et al, A new type of magnetism-controllable Mn-based single-molecule magnet, Journal of Magnetism and Magnetic Materials, 458, 90, 2018.?

    17. Ningyang Liu, Ding Li, Lei Wang, Lei Liu, et al, Enhanced Hole Transport in Mg-Doped AlxGa1-xN/GaN Superlattices by Strain and Period Modulations, Japanese Journal of Applied Physics, 51, 071001, 2012. ?

    18. Ningyang Liu, Lei Liu, Lei Wang, et al, Improvement of Doping Efficiency in Mg-Al0.14Ga0.86N/GaN Superlattices with AlN Interlayer by Suppressing Donor-like Defects, Chinese Physics B, 21, 117304, 2012.?

    19. Wei Yang, Ningyang Liu, Zhao Chen, Ding Li, Lei Wang, Lei Liu, Lei Li, Chenghao Wan, Weihua Chen and Xiaodong Hu. Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes. Applied Physics Letters, 100, 031105, 2012.?

    20. Lei Li, Justin P. C. Liu, Lei Liu, Ding Li, Lei Wang, Chenghao Wan, Weihua Chen, Zhijian Yang, Yahong Xie, Xiaodong Hu, and Guoyi Zhang, Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels, Applied Physics Express, 5, 051001, 2012. ?

    21. Wang Wei, Yang Zi-wen, Yu Tao, Xing Bing, Wang Lei, Li Rui, Du Wei-min, Hu Xiao-dong, The Impact of Stripe With in the Variable Stripe Length Method on GaN Gain Measurements, Chinese Journal of Luminescence, 31, 86, 2008.?

    22. Chen Zhao, Yang Wei, Liu Lei, Wan Cheng-Hao, Li Lei, He Yong-Fa, Liu Ning-Yang, Wang Lei, Li Ding, Hu Xiao-Dong, and Chen Wei-Hua, Efficiency droop alleviation in the blue light emitting diodes by the InGaN/GaN triangular shaped quantum well, Chinese Physics B, 21 108505, 2012. ?

    23. Wei Zhang, Peichi Liu, Biyun Jackson, Tianshu Sun, Shyh-Jer Huang, Hsiao-Chiu Hsu, Yan-Kuin Su, Shoou-Jinn Chang, Lei Li, Ding Li, Lei Wang, Xiaodong Hu and Yahong Xie, Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN, Journal of Applied Physics, 113, 144908, 2013.?

    會議論文：?

    1. Lei Wang, Binhong Li, Junjun Wang, Xiaojun Guan, et al, Proton Irradiation Effects on the Static and Dynamic Characteristics of GaN-based Blue Light Emitting Diodes for Space Light Communication, RADECS 2019, Montpellier, France, 2019.?

    2. Lei Wang, Xuewen Zhang, Bo Li, Ningyang Liu, et al, Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light Emitting Diodes, RADECS 2019, Montpellier, France, 2019.?

    3. Lei Wang, Qingxuan Li, Ningyang Liu, Ligang Song, et al, Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light Emitting Diodes, RADECS 2018, Goteborg, Sweden, 2018.?

    4. Lei Wang, Rui Li, Lei Liu, and Xiaodong Hu, Analysis of Mg acceptors activation property in strain modulated AlGaN/GaN superlattices with AlN interlayer, ICNS 2011, Glasgow, UK, 2011.?

    5. Lei Wang, Rui Li, Ding Li, Ningyang Liu, et al, Improvement of electrical properties of p type AlGaN/GaN superlattices by inserting an AlN interlayer, ICSNN 2010, Beijing, China, 2010.?

    6. Lei Wang, Rui Li, and Ding Li, Low temperature cathodoluminescence investigation of the strain relaxtion in prestrained InGaN/GaN quantum wells, ISSLED 2010, Beijing, China, 2010.?

    7. Lei Wang, Rui Li, and Xiaodong Hu, Analysis of the effect of two series n-type of GaN/AlGaN superlattices on the crystal quality of the GaN/InGaN MQWs LD, APWS 2009, Zhangjiajie, China, 2009.?

    8. Xuewen Zhang, Lei Wang*, Bo Li, et al, Proton Irradiation effect on high efficient organic-inorganic metal halide perovskite solar cell, NSREC 2019, San Antonio, USA, 2019.?

    9. Xiaoting Shan, Yun Sun，Meng Xun, Lei Wang*, et al, Radiation Effects on the Static and Dynamic Characteristics of 850 nm 10 GHz GaAs Based Vertical Cavity Surface Emitting Lasers, NSREC 2020, New Mexico, USA, 2020.

    專利申請：

  • 1. 王磊，李博，趙發(fā)展，韓鄭生，羅家俊，劉新宇，一種單光子光源的制備方法及元器件，201811423197.4?

    2. 王磊，時東霞，周冠軍，一種測量真空玻璃傳熱系數(shù)的裝置，201611171344.4?

    3. 王磊，時東霞，周冠軍，一種可以顯示的真空玻璃， 201621387758.6?

    4. 王磊，田雪雁，任章淳低溫多晶硅薄膜的制備方法，CN203456472U ?

    5. 時東霞，周冠軍，王磊，一種用于真空玻璃的吸氣劑裝置及其使用方法， 201611171333.6

    獲獎及榮譽：

  • 2018年獲得微電子所“科研新星”優(yōu)秀獎?

    2018年獲得微電子所“優(yōu)秀員工”稱號